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| FLC257MH-8 C-Band Power GaAs FET FEATURES * * * * * High Output Power: P1dB = 34.0dBm(Typ.) High Gain: G1dB = 8.0dB(Typ.) High PAE: add = 35%(Typ.) ProvenReliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC257MH-8 is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25C Condition Rating 15 -5 15 -65 to +175 175 Unit V V W C C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 17.8 and -1.2 mA respectively with gate resistance of 200. 3. The operating channel temperature (Tch) should not exceed 145C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Symbol IDSS gm Vp VGSO P1dB G1dB add Rth Channel to Case VDS = 10V, IDS = 0.6 IDSS (Typ.), f = 8.5 GHz Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS =600mA VDS = 5V, IDS =50mA IGS = -50A Min. -1.0 -5 32.5 7.0 Limit Typ. Max. 1000 1500 500 -2.0 34.0 8.0 35 8 -3.5 10 Unit mA mS V V dBm dB % C/W Power Gain at 1dB G.C.P. Power-added Efficiency Thermal Resistance CASE STYLE: MH G.C.P.: Gain Compression Point Edition 1.1 July 1999 1 FLC257MH-8 C-Band Power GaAs FET DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE POWER DERATING CURVE Total Power Dissipation (W) 16 12 8 4 0 50 100 150 200 Drain Current (mA) 1000 750 500 250 0 2 4 6 VGS =0V -0.5V -1.0V -1.5V -2.0V 8 10 Case Temperature (C) Drain-Source Voltage (V) OUTPUT POWER & IM3 vs. INPUT POWER Output Power (S.C.L.) (dBm) 29 f1 = 8.5 GHz f = 8.51GHz 27 2 2-tone Test Pout IM3 VDS=10V -10 IM3 (dBc) -20 -30 -40 -50 25 23 21 19 12 14 16 18 20 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. INPUT POWER VDS = +10V P1dB & add vs. VDS f=8.5 GHz IDS 0.6 IDSS Output Power (dBm) 35 IDS 0.6 IDSS P1dB (dBm) 33 31 29 27 25 23 17 19 21 23 25 27 Input Power (dBm) f = 8.5 GHz Pout 35 34 33 P1dB 50 40 30 add (%) 30 add add (%) 50 40 20 10 add 8 9 10 Drain-Source Voltage (V) 2 FLC257MH-8 C-Band Power GaAs FET +j50 +j25 6GHz 9 8.5 8 7.5 7 6.5 6GHz S11 S22 +j100 +90 S21 S12 6.5 7 7.5 +j10 +j250 7 7.5 6GHz 7 6GHz 8 8 8.5 9 9 8.5 9 25 8.5 50 8 100 250 0 180 4 3 2 1 .02 .04 .06 .08 0 SCALE FOR |S21| -j10 -j250 -j25 -j50 -j100 SCALE FOR |S12| -90 FREQUENCY (MHZ) 500 6000 6500 7000 7500 8000 8500 9000 9500 10000 S11 MAG .928 .826 .770 .666 .485 .170 .243 .561 .740 .828 ANG -142.8 127.2 114.2 98.0 78.9 55.0 -164.9 170.0 150.0 134.3 S-PARAMETERS VDS = 10V, IDS = 600mA S21 S12 MAG ANG MAG ANG 7.163 1.097 1.179 1.270 1.453 1.500 1.368 1.053 .758 .569 109.2 90.1 92.6 84.3 73.2 53.1 29.9 10.3 -1.9 -9.3 .021 .025 .026 .030 .035 .041 .042 .038 .029 .023 28.8 99.3 98.5 81.0 67.7 43.3 14.0 -12.0 -29.6 -40.1 S22 MAG .344 .778 .798 .834 .863 .894 .889 .874 .848 .846 ANG -157.2 -174.5 -179.6 175.7 169.2 162.7 156.1 150.6 146.0 143.4 Download S-Parameters, click here 3 FLC257MH-8 C-Band Power GaAs FET Case Style "MH" Metal-Ceramic Hermetic Package 2-o1.80.15 (0.071) 0.5 (0.020) 1 1.0 Min. (0.039) 0.1 (0.004) 3.50.15 (0.138) 3 2 1.0 Min. (0.039) 1.650.15 (0.065) 2.8 Max (0.110) 3.50.3 (0.138) 1.0 (0.039) 10.00.3 (0.394) 0.1 (0.004) 6.70.2 (0.264) 1: Gate 2: Source (Flange) 3: Drain Unit: mm (Inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not put these products into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4 |
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